| 摘要 |
PURPOSE:To upgrade the humidity resistance of an integrated circuit by a method wherein elements such as a transistor, a resistor, a capacitor, etc., formed on the semiconductor substrate, are electrically connected to each other through a metal thin film and at least one part of the metal thin film is formed on an amorphous alloyed metal. CONSTITUTION:A contact window 13 for interelement connection use is provided in a semiconductor substrate 12 and an ordinary thin film 15 for metal wiring is provided on the main surface thereof. Furthermore, an amorphous alloyed thin film 16 is provided on the thin film 15 for metal wiring. According to such a way, as the corrodible wiring thin film 15 is protected with the incorrodible amorphous alloyed thin film 16, an element, which is stronger in humidity resistance, corrosion-resistant property, etc., is obtained as an integrated circuit. |
