发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 PURPOSE:To operate a memory accurately without narrowing the pulse width of a write control signal even if the device is operated in a high speed, by providing a pulse generating circuit which detects the rise or the fall of the write control signal to generate an internal write pulse having a prescribed pulse width. CONSTITUTION:A write control signal WE having a pulse width Tw is inputted to an input buffer Gi, and an internal signal phiw having the in-phase as this signal WE and an internal signal phiw having the opposite phase are generated. The internal signal having the opposite phase is delayed by a delay circuit D to obtain a signal phiwd, and this signal is supplied to an OR circuit Go together with the signal phiw. As the result, an internal write pulse WE' which is determined by a delay time (d) of the circuit D and has a pulse width shorter than that of the control signal WE is generated by the OR circuit Go and is supplied to a read/write circuit. Consequently, since the write control signal WE is converted to the narrow-width write pulse WE' internally even if the write control signal WE having a wide pulse width is given from the external, malfunction is prevented even if the trailing edge of the external write control signal WE comes to the next cycle.
申请公布号 JPS6079591(A) 申请公布日期 1985.05.07
申请号 JP19830186702 申请日期 1983.10.07
申请人 HITACHI SEISAKUSHO KK 发明人 HOTSUTA ATSUO;KATOU YUKIO
分类号 G11C11/413;G11C7/00;G11C11/34 主分类号 G11C11/413
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