| 摘要 |
PURPOSE:To improve operation characteristics of a memory device by providing ''Permalloy'' transfer patterns of minor loops and conductor patterns on an insulating layer of a magnetic garnet and providing an insulating layer and ''Permalloy'' transfer patterns of major transfer paths in order on them. CONSTITUTION:The first insulating layer 2 is provided on a magnetic garnet 1, and ''Permalloy'' transfer patterns 3 of minor loops are formed direcdtly on this insulating layer. Next, conductor patterns 4 are formed, and ''Permalloy'' transfer patterns 6 of major transfer paths are formed on the second insulating layer 5 which is made flat. In the memory device of this constitution, good characteristics are shown because ''Permalloy'' transfer patterns 3 of minor loops are provided on the first insulating layer 2 and are near the magnetic garnet 1 and ''Permalloy'' transfer patterns 7 near junction parts to major loops are provided on the completely flat face. |
