| 摘要 |
A gated diode switch (GDS1, GDS3, GDS4, GDS10) requires a voltage applied to the gate which is more positive than that of the anode and cathode in order to break current flow between the anode and cathode. In addition, a current of at least the same order of magnitude as flows between anode and cathode must flow into the gate of the switch to break current flow. The use of a second gated diode switch (GDS2, GDS20) coupled by the cathode (28, 280) to the gate of a gated diode switch (GDS1, GDS3, GDS4, GDS10) which is to be controlled provides a high voltage and current capability means for cutting off (interrupting) or inhibiting current flow through the gated diode switch (GDS1, GDS3, GDS4, GDS10). The state of a gated diode switch (GDS1, GDS3, GDS4, GDS10) is thus controlled by a second gated diode switch (GDS2, GDS20). The state of the second gated diode switch (GDS2, GDS20) is controlled by a circuitry (A, A0) consisting of an n-p-n transistor (Q1, Q10), at least one p-n-p transistor (Q2, Q20), and at least one diode (D2, D20, D3, D4).
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