发明名称 |
Method of forming a dielectric layer comprising a gettering material |
摘要 |
The present invention comprises a method of forming a thin film dielectric layer on a substrate. The method comprises providing a sputtering chamber having a dielectric target disposed on a target electrode. A substrate to be covered with a thin film dielectric layer is introduced into the sputtering chamber and the substrate is located on a substrate holder electrode spaced from the target electrode. The chamber is then evacuated, and a sputtering atmosphere comprising an inert gas and a gas containing an element of a gettering material is introduced into the chamber. The gas containing an element of a gettering material is transferred into the chamber through a metering valve from a container outside the chamber. An RF potential is applied across the target electrode and the substrate electrode to establish a glow discharge in the region between the electrodes. Finally, a thin film dielectric layer doped with a gettering material is formed by a chemical reaction in the chamber.
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申请公布号 |
US4515668(A) |
申请公布日期 |
1985.05.07 |
申请号 |
US19840603858 |
申请日期 |
1984.04.25 |
申请人 |
HONEYWELL INC. |
发明人 |
BROWNELL, DAVID J.;ROBERTS, JON A. |
分类号 |
C23C14/34;H01L21/316;H01L23/26;(IPC1-7):C23C15/00 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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