| 摘要 |
PURPOSE:To enable to perform a highly precise exposure in a short period by a method wherein the height of a plurality of points in a deflection field is measured simultaneously, and the irradiation position of an electron beam and/or the image-forming position in optic-axial direction are finely corrected corresponding to the position of exposure. CONSTITUTION:A light which passed through a plurality of slits 8 is made to irradiate in the direction of the surface of the material 1 to be exposed, it is constituted in such a manner that the image of a plurality of slits 8 will be image-formed on the detection surface of photoelectric position detectors 12a- 12c based on the reflected light in a diflection field located on the surface of said material 1. An electron beam exposure is performed by correcting (14 and 15) the amount of deflection of the electron beam which will be made to irradiate on the material 1 to be exposed and/or the distortion of deflection and/or the imageformaton position in the optic-axial direction based on the signal, which indicates the position of each slit image, sent from said photoelectric position detectors 12a-12c. As a result, a highly precise exposure can be performed in a short period even when the exposure is performed using the exposing device having an electrooptical system of small work distance. |
