SEMICONDUCTOR INTEGRATED CIRCUIT

摘要

PURPOSE:To prevent the parasitic thyristor effect from happening by a method wherein Schottky barrier diodes are provided between an epitaxial layer and a collector region outside a transistor of island regions. CONSTITUTION:An N type silicon epitaxial layer 22 is formed on a P type silicon semiconductor substrate 21 and the layer 22 is separated by a separating region 26 to form island regions 23-25. A transistor 33 comprising a collector region 28, a base region 30 and an emitter region 32 is provided on the island region 23. On the other hand, Schottky barrier diodes 37-39 are provided respectively between a collector region 29 and the island region 23 and between dual diffusion regions 34 and 35 in the normal direction.