FET AMPLIFIER WITH WIDE DYNAMIC RANGE

摘要

FET AMPLIFIER WITH WIDE DYNAMIC RANGE A simple method for increasing the dynamic range of a GaAs FET amplifier is described. The drain resistance of the FET is adjusted to induce leakage current across the gate-source junction when excessive power levels are imposed on the gate. This current shunt is provided without added circuit components and therefore does not affect the sensitivity or bandwidth performance of the amplifier. (FIG. 3).