| 摘要 |
PURPOSE:To improve flatness of the surface of an epitaxial layer by removing a polysilicone layer formed on an insulation film after the epitaxial layer is formed on all the surface. CONSTITUTION:An aperture is formed by patterning after an insulation film 2 is formed on a substrate 1. Then, an epitaxial layer 3 is formed on all the surface of the substrate 1. In this case, a polysilicone layer 4 is grown on the insulation film 2. Then, the polysilicone layer 4 is removed. Later, the remaining epitaxial layer 3 or the epitaxial layer continuous to the polysilicone layer is melted by using such as laser annealing, EB annealing or lamp flush annealing and the surface is flattened. |
