A semiconductor integrated circuit device comprising an MOS transistor and a bipolar transistor and a manufacturing method of the same.

摘要

A semiconductor integrated circuit device is disclosed which comprises a bipolar transistor and a field effect transistor, in which a gate electrode (38, 39) of the field effect transistor and a collector electrode (402) of the bipolar transistor are formed from a common electrode layer (102) of a high impurity concentration, and in which the collector region (242) of the bipolar transistor comprises a region (100) of a high impurity concentration having a conductivity type the same as that of the collector region (242) of the bipolar transistor.