| 摘要 |
PURPOSE:To obtain a pad in which no isolation occurs for an SiO2 film covered on a semiconductor substrate by laminating a polycrystalline Si film, a Ti film, and a Pt film on the SiO2 film when forming a bonding pad on the SiO2 film. CONSTITUTION:An SiO2 film 2 is covered on a semiconductor substrate 1, patterned to remove the end, and an ohmic region 3 on which the surface is Pt-silicified is formed on the surface layer of the exposed substrate 1. Thus, one end A including the region 3 is used as the ohmic electrode, the other end C is used as a bonding pad, and further the region B inserted therebetween is used as a wiring part. Thus, with the construction, a polycrystalline Si film 4 is formed on the film 2 at the pad C, and a Ti film 5, a Pt film 6, an Au film 7 are laminated over the regions A, B, C on the entire surface including the film. Thus, the film 5 is interposed on the pad C formed on the film 2, thereby improving the bondability. |
