| 摘要 |
<p>PURPOSE:To avoid the crystalline defect of a pellet by forming deep grooves under scribing lines when forming the scribing lines to divide a semiconductor wafer into a plurality of pellets, thereby preventing a slip line from running for a long period of time. CONSTITUTION:An epitaxial layer 12 is grown on an Si substrate 11, and scribing lines 4 are laterally and longitudinally formed to divide a semiconductor wafer 10 into a plurality of pellets. At this time, deep grooves 13 are cut under the lines 4. If the thickness (a) of the substrate 11 is 400-500mum and the thickness (b) of the layer 12 is 10-15mum, the depth of the grooves 13 is decided to approx. 100mum. Thus, slip lines occurred due to thermal distortion or machanical distortion produced in the step of forming elements on the wafers 10 can be stopped at the grooves 13, and the defects occur only at the peripheral edges of the wafer 10, thereby largely improving the yield of the elements.</p> |
