Semiconductor device and method of manufacturing the same

摘要

A bonding wire 6 for connecting a semiconductor pellet 3 and a lead in a semiconductor device has the shape and height of its loop controlled by annealing the bonding wire at a specified temperature before bonding and/or by employing a specified composition for the material of the bonding wire. In addition, good bondability can be attained if the hardness of a ball formed at the end of the bonding wire for ball bonding is in a specified range of Vickers hardness of 30 to 50, preferably 35 to 42. The bonding wire is made of aluminum or an aluminum composition containing e.g. about 1.5 weight-% of magnesium or about 2% of silicon.