| 摘要 |
PURPOSE:To grow a large-sized beryl single crystal with little defects at a constant growth speed, by adding a specific flux to a base material, containing rock crystal as silicon dioside, and exhibiting the composition ratio of the beryl, heating the resultant mixture, and forming a molten salt. CONSTITUTION:One or more selected from vanadium pentoxide, lithium molybdate, sodium molybdate, molybdenum trioxide, lithium oxide, sodium oxide, etc. as a flux are added to a raw material, containing beryllium oxide, aluminum oxide, rock crystal as silicon dioxide and chromium oxide as a colorant, etc., and exhibiting ratio of almost beryl. The resultant mixture is then heated at the melting temperature of the flux or above to form a molten salt, and the aimed beryl single crystal is deposited. According to the above-mentioned method, beryl single crystal of high quality can be efficiently grown. This is because the rock crystal is easily melted in the flux as opposed to the quartz without forming an intermediate compound on the surface of the rock crystal and the silicon oxide concentration in the flux can be easily controlled. |
