Field controlled thyristor with double-diffused source region

摘要

Disclosed is a field controlled thyristor in which a first semiconductor region of N+-type, a second semiconductor region of N-type, third semiconductor regions of P-type, a fourth semiconductor region of N--type and a fifth semiconductor region of P+-type are formed in a semiconductor substrate having two main surfaces, the first, second and third semiconductor regions being exposed in the first main surface and the fifth semiconductor region being exposed in the second main surface; and the third semiconductor regions of P-type are spaced from each other by a predetermined spacing. The third semiconductor regions are connected with surface-exposed semiconductor regions exposed in the first main surface. The impurity concentration in the second semiconductor region decreases from the first semiconductor region toward the third semiconductor region so that a low forward voltage drop can be achieved along with a high reverse blocking voltage. Also disclosed is a method for forming the third semiconductor regions and the surface-exposed semiconductor regions through a diffusion process alone.