| 摘要 |
PURPOSE:To enable to prevent the generation of a flaw on a resist film by a method wherein, in the manufacturing process of a semiconductor device, a film having excellent light transmissing property is interposed between a fine pattern mask and the resist film on a substrate. CONSTITUTION:A fine pattern is transferred to the resist film 5 located on a substrate 4 using the fine patterns 2 and 3 located on a fine pattern mask 1 by irradiating a light. The recess 9, generated by the foreign substance 6 adhered to the fine pattern mask 1, is generated on the gelatine film 8 which is coated on the resist film 5, but the defect generated by the foreign substance 6 is not transferred to the resist film 5, if said resist film 5 is developed after the gelatine film 8 has been removed by rising in water. |
