| 摘要 |
PURPOSE:To form a wiring layer having high reliability with no stepped section by forming a groove receiving the wiring layer to an insulating film before boring a contact hole. CONSTITUTION:An insulating film 202 is grown on a semiconductor substrate 201 by conventional technique, and a groove 203 receiving a wiring layer is formed by using a mask for the wiring layer. A contact hole 204 is bored at a desired position, and a wiring substance 205 in sufficient thickness is further attached. The flattenend wiring layer is shaped by properly etching the wiring substance by the wiring-layer mask. Processes in which a resist 206 is removed, the wiring substance is etched slightly and the wiring layer is shaped are added as required at that time. A protective film 208 is grown, and one-layer wiring is completed. One-layer wiring system is mentioned above, but the method can be adapted even in the case of multi-layer wirings, such as double layers, three layers, etc. Since the stepped sections of wirings are reduced with the increase of layers, inter-wire short circuits due to the remaining of wirings and breaking at the stepped sections of wirings and the like can be prevented, and multilayer wirings having high reliability can be realized. |
