发明名称 Apparatus for plasma assisted evaporation of thin films and corresponding method of deposition
摘要 An improved method of and apparatus for depositing thin films, such as indium tin oxide, onto substrates, which deposition comprises one step in the fabrication of electronic, semiconductor and photovoltaic devices. The method includes the novel steps of combining the use of (1) an electron beam to vaporize a source of solid material, and (2) electromagnetic energy to provide an ionizable plasma from reactant gases. By passing the vaporized solid material through the plasma, it is activated prior to the deposition thereof onto the substrate. In this manner, the solid material and the reactant gases are excited to facilitate their interaction prior to the deposition of the newly formed compound onto the substrate.
申请公布号 US4514437(A) 申请公布日期 1985.04.30
申请号 US19840606014 申请日期 1984.05.02
申请人 ENERGY CONVERSION DEVICES, INC. 发明人 NATH, PREM
分类号 C23C14/06;C23C14/08;C23C14/32;H01J37/305;H01J37/32;H01L31/18;(IPC1-7):B05D3/06 主分类号 C23C14/06
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