发明名称 |
Germanium p-i-n photodetector on silicon substrate |
摘要 |
Devices useful, for example, as detectors in telecommunications systems have been formed utilizing a specific structure. In particular, a p-i-n device is fabricated on a silicon substrate having the necessary circuitry for signal processing. This p-i-n device is produced by depositing an intermediary region having a compositional gradient on this substrate and forming a germanium based p-i-n diode on the intermediary region.
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申请公布号 |
US4514748(A) |
申请公布日期 |
1985.04.30 |
申请号 |
US19830554061 |
申请日期 |
1983.11.21 |
申请人 |
AT&T BELL LABORATORIES |
发明人 |
BEAN, JOHN C.;KASTALSKY, ALEXANDER;LURYI, SERGEY |
分类号 |
H01L31/10;H01L31/105;H01L31/12;(IPC1-7):H01L29/12 |
主分类号 |
H01L31/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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