| 摘要 |
The mask is of etch resistant, temperature resistant and light insensitive plastic and the pattern of cut outs, in necessary regions, is formed in the plastic layer by electron beam machining, these cut outs being used subsequently for the addition or removal further material to or from the body. The plastic film may be between approx. 1 micron and a few tenths of a millimetre thick and be of PTFe or polyurethane sprayed on to the semiconductor body. |
