| 摘要 |
PURPOSE:To enlarge the step located between a mark established part and the other mark established part, to increase the intensity of a position detecting signal and to obtain high positioning accuracy by a method wherein a protective resist layer is formed on the upper part only of the mark established part, and an etching is performed thereon. CONSTITUTION:The position of a semiconductor wafer 1 is detected by scanning electron beams all over the mark 2 located on the wafer 1, the P type electron beam resist layer part located on a mark established part 3 is selectively coated, and it is inverted to an N type layer. The resist layer part only of a marked part 4 is selectively removed by irradiating electron beams and by performing a developing process. A pattern is drawn on the wafer 1, and resist developing, etching and the like are performed thereon using the resist pattern as a mask. The wafer part corresponding to the marked part 4 can also be etched when the above-mentioned etching process is finished, and a recess 41 is formed. As a result, the step located between the mark established part 3 and the marked part 3 can be increased, the intensity of position detecting signal by the irradiation of electron beams can be increased, and the accuracy of position detection can also be improved. |
