| 摘要 |
PURPOSE:To increase the reading/writing speed with a random access and to simplify the constitution of a magnetic random access memory system with cost reduction, by energizing an address line to write information and detecting the direction of a magnetic domain by means of the magneto-resistance effect to read information respectively. CONSTITUTION:An external coil is used to give upward or downward magnetization to uniaxial magnetic anisotropic matters 1a serving as each memory unit. Then the selective energization is given between X-direction read/write lines X1, X2- and Y-direction read/write lines Y1, Y2-. The external coil is energized in the direction where the matters 1a- are magnetized upward while a ''Permalloy'' pattern 2 is kept under a heating state. Thus only the matter 1a of the heated part is easily magnetized upward. In the same way, the energization is given in the direction where the downward magnetization is carried out. Thus only the matter 1a at the heated part is easily magnetized downward. In such a way, the magnetizing directions of the matters 1a are set at random to set the magnetizing directions opposite to logics 1 and 0. Then the magnetizing direction is detected and read out to obtain a magnetic random access memory. |
