| 摘要 |
PURPOSE:To prevent the breakage of wafers due to irregularity of heat by applying radiation heat uniformly on the wafers by a method wherein, in the case of a heating device of the substrate of the wafers and the like to be used for the manufacture of a super LSI (large scale integrated circuit) and the like, a quartz plate is provided in th forward direction of an infrared ray heater. CONSTITUTION:A wafer 4 is brought in a vacuum chamber 1 from the cassette case 3 located in a preparatory chamber 2, it is heated up by an infrared ray heater 5 and sent to a processing part 7. A quartz plate 8 is provided in the forward direction of the hater 5 and the wafer 4 is brought to come in contact with the quartz plate 8. The quartz plate 8 is divided, a part of which is formed into a vertically moving stand 9, the wafer 4 is placed thereon, the stand 9 comes down and heat is applied thereon. This heating process is performed using the radiation heat of the heater and the conduction heat coming from the quartz plate in a short period which is approximately one half of the period required for the heating by the radiation heat of heater, thereby enabling to enhance the processing efficiency of the substrate and to perform a uniform radiation heating using the quartz plate with which infrared rays are scattered. |
