| 摘要 |
PURPOSE:To execute the expected action even when the temperature of the semiconductor logic circuit rises by connecting serially the first channel type electric field effect transistor, a diode circuit, and the second channel type electric field effect transistor between the first and second electric power source terminals. CONSTITUTION:When a small amplitude logic signal SB is obtained by a high electric potential VBH from an output terminal 4, the resistance of a diode 21 is decreased as the temperature rises, and therefore, the drop voltage of a diode circuit D1 is decreased as the temperature rises, and the value of the high electric potential given to the gate of the electric field effect transistor Q3 is increased as the temperature rises. Consequently, the voltage between the gate of Q3 and the source connected to an electric power source terminal E1 is decreased, the temperature dependency of the shifting degree of the carrier (electron) is a little only influenced by the temperature dependency of the drain electric current, and the value of the high electric potential VBH is increased as the temperature rises. Thus, the high electric potential VBH is obtained by having the value of the allowable scope of the high electric potential VCH of a small amplitude logic signal SC handled at a semiconductor logic circuit C, and even when the temperature rises, the expected action is executed. |
