| 摘要 |
PURPOSE:To improve the packing density as well as the image resolution of a solid-state image pickup device with a compact design, by using a conductor area extending from the surface side through the rear side of a semiconductor chip to secure connections among a photodetecting semiconductor element, a signal processing circuit element and a lead. CONSTITUTION:A single semiconductor chip 31 includes a photodetecting semiconductor area 31a and a signal processing semiconductor area 31b. The area 31a contains a charge coupling semiconductor element such as a CCD, etc. and a semiconductor image pickup element like an MOS transistor array, etc. Then a color filter film is formed on the surface of the area 31a. A lead 33 is connected to the rear side of the chip 31. At the same time, the connections are secured among areas 31a and 31b and the lead 33 via a conductor area 34 piercing the surface side through the rear side of the chip 31. In such a way, the lateral size W of a solid-state image pickup device can be reduced when viewed from the side of the incident light. |
