| 摘要 |
PURPOSE:To eliminate any stress generated on a semiconductor substrate surface and to improve various electric properties of the semiconductor device by forming, between the semiconductor substrate and a surface protection film, which is an insulation film having a thickness enough to cancel the heat stress generated by the formation of the surface protection film. CONSTITUTION:The surface protection film 3 has a stress whose direction is different from that of the stress of the insulation layer 2. The ratio of thicknesses of the insulation layer 2 to the surface protection film 3 is approximately equal to the ratio of stresses of the surface protection film 3 to the insulation layer 2. In such a manner any stress generated on the surface of the semiconductor device 1 can be eliminated, and the various electric properties of the semiconductor device can be remarkably improved. |
