| 摘要 |
PURPOSE:To reduce defective percentage in a face plate process and to improve picture quality by forming a SiC:H film with special thickness as a leak resisting layer on a face plate of glass, whereby the SiC:H film is doped with special amount of PH3 gas in a special temperature range. CONSTITUTION:A transparent electrode 4 processed in stripes is provided on a glass substrate 5 with a color filter and the leak resisting layer 6 is formed as follows: Firstly, a face plate is mounted on a sample bedplate of a sputtering apparatus, of which the target is polysilicon and temperature rising is restrained with cooling water so that the temperature may range from the room temperature to 100 deg.C. In that state, the inside of a bell jar in the apparatus is exhausted to vacuum, for example, to 10<-4> pascal of vacuum degree. And thereafter hydrogen gas including the given amount of Ar, CH4 and PH4 gases, respectively, is introduced into the bell jar. The sputtering is carried out with about 1 pascal of gas pressure and the SiC:H film 6 with 30-90nm of film thickness is formed on the face plate. |
