| 摘要 |
PURPOSE:To shorten a space in the lateral direction largely, and to increase the density of integration and the speed of operation by forming a source-side diffusion layer and a drain-side diffusion layer to upper and lower sections and forming a gate electrode to a side wall in the etched surface of a substrate. CONSTITUTION:A field insulating film 22 is shaped on an silicon substrate 21, and a polycrystalline silicon layer 23 is applied and a region reaching to the field insulating film 22 from the center of an active region being in contact with the substrate 21 is etched vertically to the substrate. The surface of the exposed silicon substrate 21 and the polycrystalline silicon layer 23 are oxidized to form a gate oxide film 24. A second polycrystalline silicon layer is applied, and a gate electrode 25 is shaped on a border between the polycrystalline silicon layer 23 and the substrate 21 through etching. Source and drain impurity diffusion layers 26, 27 are formed through ion implantation. A lateral space between a source and a drain can be shortened largely, an active area is minimized, and the speed of operation is increased by the reduction of capacity. |
