| 摘要 |
PURPOSE:To form a nonvolatile memory of large scale and large capacitance using a semiconductor film by a method wherein the write and the erase are performed by means of electrodes directly arranged above and below an MNOS element. CONSTITUTION:A memory array has M pieces of Y selection lines arranged as the lower electrodes, and N pieces of data lines as the upper electrodes. Thin film MNOS elements are formed at the points of intersection of the matrix. An address decoder 10 on the Y-side selects one of lines Yl-YM by means of address inputs AY1-AYm. The N pieces of data lines exchange memory information as the data of lines D0-Dp between the outside by means of address inputs AXl-AXn via readout-write control circuit (including a sense amplifier) 11. When the memory array has a very large matrix, it may be provided with a redundant circuit 15 for the relief of derective bits or defective lines. |
