| 摘要 |
PURPOSE:To effectively lessen inverse current without reducing the forward direction characteristics of the title diode by a method wherein each outermost side circumferential edge part of the Schottky barrier metal region is encircled with a guard ring region, and at the same time, the inverse withstand voltage of each semiconductor part adjoining to them is made to drop. CONSTITUTION:The depth and width of each guard rind 4 are respectively set deeper and wider than those of each of semiconductor regions 7 for space-charge region formation. Each semiconductor region at the outermost edges is made to function as the guard ring 4 and a Schottky barrier forming metal laer 1 is formed across the semiconductor regions 4 and 7 and regions surrounded with the regions 4 and 7. The interval (a) and (b) of the encircled regions are set in most than double that of each of depletion layers, which are made of the p<+> type and N<-> type semiconductors, that is, in a degree that the passages for inverse current can be reduced to zero by pinchoff. For preventing the with-stand voltage from dropping, the guard ring 4 is respectively provided at the outermost side circumferential edge parts of the P-N junction. |
