| 摘要 |
PURPOSE:To make directional control of a grown crystal excellent by a method wherein a silicon single crystalline film formed on a crystalline insulator is utilized as a substrate to form a single crystalline layer on an insulating film. CONSTITUTION:A single crystalline silicon film 12 is formed of silane and hydrogen conforming to SOS forming process on a sapphire substrate (crystalline insulator) 11. Succeedingly after forming a silicon oxide film (amorphous insulating film) 13 all over the surface, a groove 14 with interval and width similar to those of line is formed by photoetching process on a chip scribing line. Next a molybdenum or tungsten film (high melting point metallic film) 15 is selectively formed in the groove 14 using molybdenum fluiride or tungsten fluoride and inert gas. Later the silicon oxide film 13 is partially removed by etching process to form an opening 16 exposing a part of the single crystalline silicon film 12. The opening 16 is to be a seed in case of forming a single crystalline layer on the next insulating film. Finally a polycrystalline silicon film 17 may be formed all over the surface by thermal decomposition of silane. |
