| 摘要 |
PURPOSE:To augment current amplification degree improving accuracy by a method wherein impurities are introduced utilizing a pattern edge making off the sides of heat resistant base electrode and thermally diffused to specify the base width. CONSTITUTION:A base region 16 and an emitter region 17 are formed by means of diffusion self matching process making reference to a pattern edge of an insulating film 15 formed on the sides of a base electrode 14 or another edge of the insulating film 15 formed on the base electrode 14 and the sides of the base electrode 14. Therefore the base width may be formed narrower than convertional base width since the width of said regions 16, 17 in the lateral direction may be controlled accurately. Resultantly, any carrier implanted from the emitter region 17 may be effectively absorbed into a collector region. |
