| 摘要 |
PURPOSE:To improve yield by the disconnection of a wiring pattern by forming an insulating layer on a wiring for the first time and doubly wiring a wire according to the same pattern. CONSTITUTION:Patterns of first layer Cr wirings 2 are formed onto a glass substrate 1 through sputtering, polyimide resin is applied to form an insulating film, Al is attached through sputtering and an upper wiring is executed, and a matrix is formed. An amorphous silicon diode is shaped to the matrix. SiO2 is attached through sputtering to form an insulating film 3, through-holes are bored at the positions of the starting points and end points of the first layer Cr wirings 2, and Cr is attached to form the same pattern as a long wiring section going around the outer circumference of the first layer wiring. Even when there is disconnection in the first layer, the disconnection can be offset by the second layer wiring. |
