| 摘要 |
PURPOSE:To prevent the generation of a vertical smear by diffusion electrons by forming a p type high concentration impurity layer having concentration higher than that of other sections to the peripheral section of an n type diffusion layer in a charge transfer section. CONSTITUTION:A p type high concentration impurity region 3c having impurity concentration approximately the same as a p type high concentration impurity region 3a under an n type diffusion layer 3 in a photodiode section 4 is formed under an n type diffusion layer 3 in a charge transfer section 5, and a p type high concentration impurity region 3b and the p type high concentration impurity region 3c are involved and a high concentration impurity region 8 having impurity concentration higher than that of other sections is shaped in the peripheral section of the n type diffusion layer 3 in the charge transfer section 5. The crest 9 of potential is generated in the impurity region 9, and functions as a barrier against electrons (e) diffusing to the n type diffusion layer 3 in the charge transfer section 5, and the generation of a vertical smear can be inhibited. |
