| 摘要 |
PURPOSE:To increase density by dividing a groove dug to a semiconductor substrate into two or more and forming them in a semiconductor device with a capacitor array consisting of a capacitor using a side wall section in the groove as an electrode surface. CONSTITUTION:One transistor type dynamic random access memory (dRAM) has a capacitor region mainly using side walls in grooves 1 dug to a Si substrate 10, and leakage currents IL flow through the deep section of the Si substrate 10. When groove width WM is made small, leakage currents IL reduce because potential among the grooves is elevated by the potential of the peripheral Si substrate 10. When one grooves are divided into two so as not to vary the side wall areas of the grooves, leakage currents can be reduced remarkably without minimizing the capacitance of a capacitor, distances among the grooves can be shortened, and the integrity of the dRAM can further be increased. |
