| 摘要 |
PURPOSE:To prevent the cleavage of a chip of a conducting pin and the breakage of samples by removing the charges stored in a substrate by irradiation with an electron beam with grounding by contact with an super hard material pin given conductivity by ion implantation. CONSTITUTION:A conducting pin 11 is composed of a chip holding part 16 consisting of titanium or the like which is chaped into a truncated cone and a chip 17 brazed 18 to the truncated part. For the chip 17, a super hard material such as diamond, boron, sapphire is used and boron, phosphorus or nitrogen is implanted into an outer surface of the chip by ion implantation. A thin film layer 17b made to be amorphous is formed and the diamond or the like is made into a conductive state. A pin given conductivity is fixed to the chip holding member 16 and when a pressing force is applied to a surface of the substrate on which an oxide film 1a of a sample 1 is formed, the oxide film 1a is broken to allow the chip to break into the chip and charges 19 stored in the substrate are grounded 9 through the chip holding member 16. |
