| 摘要 |
PURPOSE:To increase the degree of integration by forming a source and a drain for a MOS transistor by Schottky barrier diodes (SBDs). CONSTITUTION:PtSi is evaporated on the inside of an n<+> diffusion layer 3 in a substrate 1 consisting of an n type semiconductor to form a drain 7 and a source 8 on the p channel side, and Ti is evaporated on the inside of a p<+> diffusion layer 5 in a p<-> well layer 2 to form a source 9 and a drain 10 on the n channel side. SBDs are each shaped by the drain 7, the source 8 and the substrate 1 and the source 9, the drain 10 and the well layer 2, thus constituting a CMOSFET. Since the drains 7, 10 and the sources 8, 9 are formed through the attachment of a metal without depending upon diffusion, Al electrodes 12, 14, 16 do not penetrate the drains and the sources and do not short-circuit with the substrate 1 and the p<-> well layer 2 even when the electrodes are attached. |
