| 摘要 |
A buried channel charge coupled device having buried channel stops (24, 26, 28) for electrostatic confinement of the signal charge. The buried channel (24, 26, 28) stops are provided by a spatial variation of the electrically active impurity concentration in the buried channel layer. The present invention allows an economical high yield construction of a CCD structure that is particularly applicable to image sensors, memories and other devices that require several parallel transfer channels contiguous to one another. |
