| 摘要 |
PURPOSE:To form a positive type resist pattern having superior plasma resistance by exposure to electron beams by using a mixture of two kinds of specified terpolymers as a resist material. CONSTITUTION:A mixture of an alpha-methylstyrene (alphaMST)/methyl methacrylate (MMA)/methacrylic acid (MA) terpolymer (M) with an alpha-methylhydroxystyrene (alphaMHST)/MMA/methacrylic acid chloride (MACL) terpolymer (N) is used as a resist material to form a positive type resist pattern. alphaMST and alphaMHST as components of the terpolymers M, N are monomers having superior plasma resistance and decomposable under irradiated electron beams, and they do not deteriorate the compatibility of the polymers. MMA improves the sensitivity to electron beams, the compatibility of the polymers and the film forming property of the resist material, so MA and MACL as cross-linking components can be contained in relatively large quantities. When the terpolymer composition is exposed to electron beams, a positive type resist pattern having superior plasma resistance can be formed. |
