发明名称 |
COMPLEMENTARY METAL-INSULATOR SEMICONDUCTOR MEMORY DECODER |
摘要 |
A complementary metal-insulated semiconductor (CMIS) which is useful for a highly integrated large-capacity ROM or RAM. The CMIS memory decoder specifies each set of 2m (m is positive integer) word lines of a memory to be accessed by the CMIS memory decoder. The CMIS memory decoder includes both 2m CMIS inverters per each set of the 2m word lines and also 2m-1 pull-down transistors per each word line, the pull-down transistors being connected between ground and the corresponding word lines, the remaining 2m-1 word lines being connected to these pull-down transistors at their gates. |
申请公布号 |
DE3169484(D1) |
申请公布日期 |
1985.04.25 |
申请号 |
DE19813169484 |
申请日期 |
1981.12.21 |
申请人 |
FUJITSU LIMITED |
发明人 |
SUZUKI, YASUO;NAGASAWA, MASANORI |
分类号 |
G11C11/41;G11C11/413;G11C11/418;G11C17/12;G11C17/18;H03M7/00;(IPC1-7):G11C17/00;G11C11/40 |
主分类号 |
G11C11/41 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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