| 摘要 |
PURPOSE:To contrive to prevent the channeling by a method wherein As or P is ion-implanted with a metallic film doped with a hetero metal as a mask. CONSTITUTION:An element isolation oxide film 2 and a gate oxide film 3 are formed on a P type Si substrate 1. Next, after boron implantation, a tungsten- containing Mo film 4 is adhered. Then, the film 4 is processed into a desired shape by etching with a photo resist 5 as a mask. A source and a drain 6 are formed by As ion implantation and annealing. The punch-through of As ions downward the gate electrode can be prevented by content of tungsten in the Mo film in such a manner. |
