| 摘要 |
PURPOSE:To contrive to increase the integration of an insulation breakdown type memory by a method wherein an insulation layer is provided on an Si substrate and difused regions, and a metallic wiring layer forming a Schottky barrier on contacting the substrate is superposed. CONSTITUTION:In order to construct a memory cell at an intersection of the diffused regions 2 of the Si substrate 1 which have been formed in lattice form and Al wiring layers 4, an SiO2 layer 3 is subjected to breakdown by conduction through the wirings 4 and the layers 2a; thus enabling read and write by utilizing a Schottky diode formed on the surface of the substrate 1 thereby. This device unnecessitates annexed diodes as conventional, and the insulation breakdown type memory capable of forming P-ROM arrays only by Al wiring can be obtained, resulting in the increase in the integration with a simple structure. |
