| 摘要 |
PURPOSE:To eliminate the noxious thermal decomposition in a thin film growing device for growing compound semiconductor thin films till a material gas reaches a substrate by providing a substrate-carrying pedestal surrounded by a sheath of a small diameter in a vertical tube reactor and a flow restrain spacer provided with a neck put in its upper part and a funnel part in its lower part above said pedestal so as to blow the material gas onto the substrate on the pedestal through said spacer. CONSTITUTION:A pedestal 10 for carrying a compound semiconductor substrate 8 is arranged in a tube reactor 2 surrounded by a water-cooled outer tube 3 with being supported by a supporting member 9 and these are surrounded by a sheath 31 of a small diameter. Next, a flow path restrain spacer 21 provided with a funnel part 24 in its lower part, a neck part 22 in its upper part and further an expanded part 23 in the middle of them is arranged above the pedestal 10 thereby blowing a material gas 37 from an upper gas introducing tube 6 onto the pedestal 10 through the spacer 21. Thus, thermal decomposition of the gas 37 till it reaches the substrate 8 can be avoided effectively. |
