| 摘要 |
PURPOSE:To contrive to improve the integration degree by a method wherein a groove of depth reaching a buried layer is formed and filled with an insulation member onto an isolation region. CONSTITUTION:P<+> and N<+> burial is performed to a P type semiconductor substrate 11, an N type epitaxial layer 12 is formed on the substrate 11. At this time, a P<+> buried layer 13P is formed outside an N<+> buried layer 13N. Next, an oxide film 20 is formed on the layer 12, and thereafter a resist film 21 of a fixed is adhered on the film 20. With the film 21 as a mask, the grooves 22 reaching the layer 13P are formed. Then, an oxide film 23 is formed in the groove 22, and then filld with poly Si. An N-well region 25 and a P<+> type collector leadout section 26 are formed in the layer 12. Further, a P<+> type emitter region and an N<+> type base contact region 28 are formed in the surface region in the region 25. Such a construction produces no possibility of the breakdown due to the collision of depletion layers because the isolation region is not conductive, and no enlargement of the isolation due to the lateral diffusion of impurity. |
