| 摘要 |
PURPOSE:To controve to miniaturize the titled element and to reduce the number of leads in the case of constructing the titled sensor by a method wherein a dug- in part is provided on an Si substrate, and the part thereon is provided with two electrodes on one side, and one electrode on the other side. CONSTITUTION:An SiO2 film 2 is grown on the surface of the Si substrate 1. The first electrode 3 and the second electrode 4 are evaporated thereon. With part of this rectangle left, the dug-in part 1a is formed by removal of the substrate and the film, and part of the electrode 3 and part of the electrode 4 are releasably supported to the substrate in the state of a double-held beam together with the film. A piezoelectric body 5 is formed so as to cover at least this beam-form section. Covering this piezoelectric body, the electrode 3 is formed, and the third electrode is formed so as not to contact the electrode. Thus, the movable part of said beam is formed. Such a construction enables the attainment of the miniaturization of the titled element. When the pressure sensor is constructed by arrangement of these elements in matrix form, lead electrodes or lead wires of a smaller number than that of the elements can be used. |
