发明名称 |
ELECTRODE AND WIRING STRUCTURE OF SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE:To avoid the generation of channeling when electrodes and wirings consisting of high-melting-point metals are arranged in a semiconductor device and impurity layers are formed by self-aligning by ion implantation using said electrodes and wirings as a mask by providing an oxide film consisting of the same metal on the metal surface before the ion implantation. CONSTITUTION:A thick SiO2 film 2 for element isolation is formed on a circumferential portion of a p type Si substrate 1 and a thin gate SiO2 film 3 is arranged on the substrate surface surrounded with said SiO2 film 2 and further the whole surface is coated with a film 4 of a high-melting-point metal such as Mo. Next, a mask 5 of a photoresist film is arranged on the substrate followed by etching using CF4 gas including O2 of 20% of leave the film 4 only in the center of surface. After that, the mask 5 is removed and a heat treatment is performed with 400 deg.C in O2 atmosphere to produce an oxide film 6 on a surface of the exposed film 4. Then this film is used as a mask to implant As ions and an implantation region 7 is formed. Thus, the ions enter deeply because atomic configurations of the metallic oxide and the metal are different and channeling is diminished. |
申请公布号 |
JPS6072229(A) |
申请公布日期 |
1985.04.24 |
申请号 |
JP19830178015 |
申请日期 |
1983.09.28 |
申请人 |
HITACHI SEISAKUSHO KK;NIPPON DENSHIN DENWA KOSHA |
发明人 |
YAMAMOTO NAOKI;IWATA SEIICHI;AMASAWA TAKAO |
分类号 |
H01L29/78;H01L21/265;H01L21/28;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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