| 摘要 |
PURPOSE:To contrive to increase the integration of elements by a method wherein an oxide film is superposed on an Si substrate and then heat-treated in a nitrogenizing atmosphere, and an Si3N4 is then provided on the surface of the oxide film and at the interface and heat-treated by means of a three-layer mask obtained by superposition and patterning of an oxidation resistant film. CONSTITUTION:An SiO2 film 12 is formed on the Si substrate 11 and heat- treated with NH2, and Si3N4 films 13a and 13b are provided. Each patterning of an Si3N4 thick film 14, SiO2 film 15, and Si3N4 film 16 is formed by selective removal of the films 13a, 13b, and 12. After a field oxide film 17 is formed with the Si3N4 14 as a mask, and the films 16, 15, and 14 are removed, the elements are formed on the surface of the substrate 11 by a normal method. This construction enables the attainment of the increase in the integration of elements by avoidance of the complication of the process and the decrease in the yield and then by inhibition of brid beaks. |
