发明名称 GROWING METHOD OF CRYSTAL
摘要 PURPOSE:To obtain a changing point with high dependability when a parameter relating to crystal growth is changed by marking a crystal ingot under crystal growth with the irradiation of a laser beam. CONSTITUTION:A seed crystal 4 attached to a seed shaft 3 is brought into contact with the core part of crystal melt 2 in a quartz crucible 1 at the core part of a furnace, and a thermal equilibrium is attained. Then the shaft 3 is slowly rotated by a seed shaft motor 15, and the shaft 3 is pulled up while cooling slowly the temp. of the free surface of the melt 2. When the lifting speed of the shaft 3 and rotating speed as the parameters of the lifted crystal or the rotating speed of the crucible 1 are changed, a laser beam 14 is irradiated toward the solid and liquid interface 12 from a laser beam source 10 to melt the grown crystal body 11 and the cut a streaky mark.
申请公布号 JPS6071593(A) 申请公布日期 1985.04.23
申请号 JP19830177255 申请日期 1983.09.26
申请人 FUJITSU KK 发明人 TAKIZAWA RITSUO;TOYOKURA NOBUO;OOSAWA AKIRA;HONDA KOUICHIROU
分类号 C30B15/20;C30B15/26;H01L21/02;H01L21/208 主分类号 C30B15/20
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