发明名称 Bistable logic circuit using field effect transistors with a low voltage threshold and storage device incorporating such a circuit
摘要 The logic circuit comprises two field effect transistors in series, whose gates are connected to the supply voltage by a first load. The source of the first field effect transistor is connected to earth. The drain of the second field effect transistor is connected on the one hand to the supply voltage by a second load and to the gate of a third field effect transistor, whose drain is connected to the supply voltage and whose source is connected to the common point constituted by the drain of the first field effect transistor and the source of the second field effect transistor via a Schottky diode.
申请公布号 US4513398(A) 申请公布日期 1985.04.23
申请号 US19820408278 申请日期 1982.08.16
申请人 THOMSON-CSF 发明人 PHAM NGU, TUNG
分类号 G11C11/40;G11C11/412;H03K3/356;H03K3/3565;(IPC1-7):G11C11/40 主分类号 G11C11/40
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