发明名称 |
RF Coupling techniques |
摘要 |
An improved reactive ion plasma etching apparatus having an improved electrode, for holding the product, such as a semiconductor wafer, to be etched, provided with a plurality of apertures into which different tailored product holders are inserted so as to alter the plasma over each holder and provide more uniform etching of the product in the holder regardless of its position on the electrode.
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申请公布号 |
US4512841(A) |
申请公布日期 |
1985.04.23 |
申请号 |
US19840596189 |
申请日期 |
1984.04.02 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CUNNINGHAM, JR., GEORGE F.;LEWIS, JOHN W.;MCCLURE, ROBERT B.;POINDEXTER, DANIEL J. |
分类号 |
C23F4/00;H01L21/00;H01L21/302;H01L21/3065;H01L21/673;H01L21/687;(IPC1-7):B44C1/22;C03C15/00;C03C25/06 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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